An Ab Initio, Fully Coherent, Semi-Analytical Model of Surface-Roughness-Induced Scattering

نویسندگان

چکیده

Integrated optics and silicon photonics is a rapidly maturing technology progressing in telecom, computation, sensing. Surface-roughness-induced scattering the primary source of optical loss most photonic integrated circuits, as such, ultimately limits performance their applications. However, closed-form description for arbitrary refractive index profiles remains lacking, even though such one essential to enable an objective-oriented design waveguide platform. We present ab initio, fully coherent, analytical model based on volume current method that uses surface roughness' autocorrelation function unperturbed mode's electromagnetic fields predict coefficient closed form. An improved expression perturbation facilitates application also high-index-contrast systems. Hence, it flexible concerning wavelength, materials, fabrication process, geometry mode. Consequently, our may be seamlessly into simulation software suites, once roughness known utilized process. To verify model, we compare calculated losses measured propagation established models wide range systems literature. find previously neglected correlation along height significantly impacts scattering, which necessitates holistic statistical analysis roughness. believe these comprehensive prediction capabilities useful tool optimization fabrication, especially low-confinement applications like sensors.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

The influence of surface roughness on electrical conductance of thin Cu films: An ab initio study

First-principles calculations show that atomic-scale surface roughness dramatically affects the electrical conductivity of thin films. Atomic clusters, 1–3 atoms high, deposited on the flat Cu 001 surface of an 11 monolayer thick film lead to a 30−40% reduction of its conductance. This is attributed to the destruction of isotropic Fermi surface sheets. We provide a simple parametrized formula, ...

متن کامل

Fully Relativistic ab initio Dirac-Coulomb Calculations

For accurate calculations of the electronic structures of the heaviest elements and their compounds, where relativistic effects are of paramount importance, the usage of fully relativistic quantum chemical methods within 4component approximation is highly desirable. Such a usage encountered until recently difficulties for many electron systems with respect to the treatment of the electron corre...

متن کامل

Ab initio calculation of inelastic scattering.

Nonresonant inelastic electron and X-ray scattering cross sections for bound-to-bound transitions in atoms and molecules are calculated directly from ab initio electronic wavefunctions. The approach exploits analytical integrals of Gaussian-type functions over the scattering operator, which leads to accurate and efficient calculations. The results are validated by comparison to analytical cross...

متن کامل

Analytic ab initio calculations of coherent anti-Stokes Raman scattering (CARS).

We present a theory for the analytic calculation of frequency-dependent polarizability gradients, and apply the methodology to the calculation of coherent anti-Stokes Raman scattering (CARS). The formalism used is based on an open-ended theory for the calculation of frequency-dependent molecular response properties of arbitrary order, also including contributions from perturbation-dependent bas...

متن کامل

An Ab initio Investigation of Pyrene Electronic Structure

Polycyclic aromatic hydrocarbons (PAHs) are a class of compounds consisting of more than twobenzene rings fused in a linear, angular, or clustered arrangement and do not contain hetero atomsor carry subsistent. PAHs originate from various sources. They are primarily formed byincomplete combustion of carbon-containing fuels such as wood, coal, diesel, fat, or tobacco. Thepresent study reports an...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Lightwave Technology

سال: 2023

ISSN: ['0733-8724', '1558-2213']

DOI: https://doi.org/10.1109/jlt.2022.3224777